JPH0479131B2 - - Google Patents

Info

Publication number
JPH0479131B2
JPH0479131B2 JP59260296A JP26029684A JPH0479131B2 JP H0479131 B2 JPH0479131 B2 JP H0479131B2 JP 59260296 A JP59260296 A JP 59260296A JP 26029684 A JP26029684 A JP 26029684A JP H0479131 B2 JPH0479131 B2 JP H0479131B2
Authority
JP
Japan
Prior art keywords
aqueous solution
alkaline aqueous
potential
silicon
silicon semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59260296A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61137330A (ja
Inventor
Kyoichi Ikeda
Katsumi Isozaki
Tetsuya Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP26029684A priority Critical patent/JPS61137330A/ja
Publication of JPS61137330A publication Critical patent/JPS61137330A/ja
Publication of JPH0479131B2 publication Critical patent/JPH0479131B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP26029684A 1984-12-10 1984-12-10 半導体の微細加工方法 Granted JPS61137330A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26029684A JPS61137330A (ja) 1984-12-10 1984-12-10 半導体の微細加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26029684A JPS61137330A (ja) 1984-12-10 1984-12-10 半導体の微細加工方法

Publications (2)

Publication Number Publication Date
JPS61137330A JPS61137330A (ja) 1986-06-25
JPH0479131B2 true JPH0479131B2 (en]) 1992-12-15

Family

ID=17346070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26029684A Granted JPS61137330A (ja) 1984-12-10 1984-12-10 半導体の微細加工方法

Country Status (1)

Country Link
JP (1) JPS61137330A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02228049A (ja) * 1989-02-28 1990-09-11 Nec Corp 半導体装置の製造方法
JP5909671B2 (ja) * 2012-03-27 2016-04-27 パナソニックＩｐマネジメント株式会社 太陽電池の製造方法及び半導体材料からなる基板の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130038A (ja) * 1984-07-23 1986-02-12 Nec Corp エツチングの方法

Also Published As

Publication number Publication date
JPS61137330A (ja) 1986-06-25

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